The IPDQ65R040CFD7 is a 650 V CoolMOS™ CFD7 superjunction N-channel MOSFET designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge (ZVS) in industrial applications including server, telecom, EV charging, and solar systems. It is housed in a PG-HDSOP-22 package with dimensions of 15.30 to 15.50 mm in length, 14.90 to 15.10 mm in width, and 20.86 to 21.06 mm in height. The device features a maximum on-state resistance of 40 mΩ, a pulsed drain current of 211 A, and a body diode with a maximum commutation speed of 1300 A/μs. It offers ultra-fast body diode performance with a reverse recovery charge of 1.3 to 2.6 μC and is fully qualified according to JEDEC for industrial applications.
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R040CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ65R040CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ65R040CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0400 ohms |
| QG | 97 nC |
