The IPDQ65R008CM8 is a 650 V silicon superjunction MOSFET designed for high-efficiency switching applications such as PFC stages and LLC resonant converters. It is packaged in a PG-HDSOP-22 case with dimensions of 15.30-15.50 mm by 14.90-15.10 mm. The device has a maximum drain-source on-state resistance of 8 mΩ, a pulsed drain current of 1100 A, and an integrated fast body diode with a di/dt capability of 1300 A/μs. It features .XT interconnection technology for improved thermal performance and is fully qualified according to JEDEC standards for industrial applications. The junction temperature operates up to 175 °C for up to 50 hours in application lifetime.
650 V CoolMOS™ 8 power transistor
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7.
It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ65R008CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ65R008CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0080 ohms |
| QG | 375 nC |
