The IPDQ60R075CFD7 is a 600 V silicon N-channel MOSFET optimized for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It is packaged in a PG-HDSOP-22-1 surface-mount case measuring 15.50 mm x 15.10 mm with a maximum junction temperature of 150°C. The device has a maximum on-state resistance of 75 mΩ, a typical gate charge of 51 nC, and a pulsed drain current rating of 97 A. It features an ultra-fast body diode with a peak reverse recovery current of 7.9 A and a reverse recovery charge of up to 1.02 µC. The MOSFET is fully qualified to JEDEC standards for industrial applications and meets RoHS requirements.
Infineon’s answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series.
CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ60R075CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R075CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0750 ohms |
| QG | 51 nC |
