Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPDQ60R065S7

Description
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning
  • 500V-950V N-Channel Power MOSFET - IPDQ60R065S7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning
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Datasheet
Datasheet Summary
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The IPDQ60R065S7 is a 600V CoolMOS™ S7 silicon carbide junction MOSFET designed for low-frequency switching applications such as solid-state relays, circuit breakers, and line rectification in SMPS and inverters. It is packaged in a PG-HDSOP-22-1 (QDPAK) case with top-side cooling, and features a maximum on-state resistance of 65 mΩ, a pulsed drain current capability of 126 A, and a Kelvin source pin for improved high-current switching performance. The device is fully qualified according to JEDEC for industrial applications, with an operating junction temperature range of -55°C to 150°C and a maximum power dissipation of 195 W at TC=25°C.

Datasheet Summary
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The IPDQ60R065S7 is a 600V CoolMOS™ S7 silicon carbide junction MOSFET designed for low-frequency switching applications such as solid-state relays, circuit breakers, and line rectification in SMPS and inverters. It is packaged in a PG-HDSOP-22-1 (QDPAK) case with top-side cooling, and features a maximum on-state resistance of 65 mΩ, a pulsed drain current capability of 126 A, and a Kelvin source pin for improved high-current switching performance. The device is fully qualified according to JEDEC for industrial applications, with an operating junction temperature range of -55°C to 150°C and a maximum power dissipation of 195 W at TC=25°C.

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500V-950V N-Channel Power MOSFET - IPDQ60R065S7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPDQ60R065S7
500V-950V N-Channel Power MOSFET IPDQ60R065S7
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning

The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling.


Summary of Features

  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source pin improves switching performance at high current

Benefits

  • Minimizes conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks in solid-state design
  • Lower TCO cost or BOM cost

Potential Applications

  • SMPS
  • Solar energy systems
  • Battery and equipment protection
  • Solid state relays (SSR) and solid state circuit breakers (SSCB)
  • Indoor commercial lighting control
  • UPS
  • Low speed electric vehicles (LSEV)
  • Programmable logic controllers (PLC)
  • Room air conditioning
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPDQ60R065S7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0650 ohms
QG 51 nC
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