Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7 IPDQ60R055CFD7

Description
Infineon’s answer to resonant high power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server Telecom EV-charging SMPS PC power
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7 - IPDQ60R055CFD7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon’s answer to resonant high power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server Telecom EV-charging SMPS PC power
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Datasheet
Datasheet Summary
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IPDQ60R055CFD7 is a 600 V CoolMOS™ CFD7 N-channel power MOSFET for soft-switching applications such as phase-shift full-bridge and LLC resonant topologies. It is packaged in a PG-HDSOP-22-1 format and features a maximum on-state resistance of 55 mΩ, a typical gate charge of 67 nC, and a pulsed drain current rating of 129 A. The device includes an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and is fully qualified according to JEDEC for industrial applications.

Datasheet Summary
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IPDQ60R055CFD7 is a 600 V CoolMOS™ CFD7 N-channel power MOSFET for soft-switching applications such as phase-shift full-bridge and LLC resonant topologies. It is packaged in a PG-HDSOP-22-1 format and features a maximum on-state resistance of 55 mΩ, a typical gate charge of 67 nC, and a pulsed drain current rating of 129 A. The device includes an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and is fully qualified according to JEDEC for industrial applications.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7 - IPDQ60R055CFD7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7
IPDQ60R055CFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7 IPDQ60R055CFD7
Infineon’s answer to resonant high power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server Telecom EV-charging SMPS PC power

Infineon’s answer to resonant high power topologies

The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market


Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

  • Server
  • Telecom
  • EV-charging
  • SMPS
  • PC power
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPDQ60R055CFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R055CFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0550 ohms
QG 67 nC
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