Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPDQ60R037CM8 IPDQ60R037CM8

IPDQ60R037CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Top side cooling QDPAK package 2000 cycle TCoB Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio SMT compatible Reduced assembly cost Reduced stray inductance Space reduction Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications e.g.: server, telecom, EV charging, UPS