The IPDQ60R035CFD7 is a 600 V silicon N-channel MOSFET designed for resonant topologies such as phase-shift full-bridge and LLC converters. It is packaged in a PG-HDSOP-22 surface-mount format, measuring 15.30 to 15.50 mm in length and 14.90 to 15.10 mm in width. The device has a maximum on-state resistance of 35 mΩ, a gate charge of 108 nC, and a pulsed drain current rating of 212 A. It features an ultra-fast body diode with a reverse recovery charge of up to 1.74 μC and a maximum diode commutation speed of 1300 A/μs. The MOSFET is qualified according to JEDEC standards for industrial applications and supports an operating junction temperature range from -55°C to 150°C.
Infineon’s answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ60R035CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R035CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0350 ohms |
| QG | 108 nC |
