The IPDQ60R025CFD7 is a 600 V silicon N-channel power MOSFET with an integrated ultra-fast body diode, designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It is packaged in PG-HDSOP-22 with dimensions of 15.30 to 15.50 mm in length, 14.90 to 15.10 mm in width, and 20.86 to 21.06 mm in height. The device has a maximum on-resistance of 25 mΩ, a total gate charge of 141 nC, and a pulsed drain current of 277 A. It supports a maximum junction temperature of 150 °C and features best-in-class reverse recovery charge (Qrr) of up to 1.96 µC and reverse diode diF/dt ruggedness of 1300 A/µs. The MOSFET is fully qualified according to JEDEC for industrial applications.
Infineon’s answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ60R025CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R025CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0250 ohms |
| QG | 141 nC |
