The IPDQ60R020CFD7 is a 600 V CoolMOS™ CFD7 silicon n-channel power MOSFET designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converter applications in server, telecom, and EV charging systems. It is housed in a PG-HDSOP-22 surface-mount package with a drain tab. The device has a maximum on-state resistance of 20 mΩ, a gate charge of 186 nC, and a pulsed drain current rating of 360 A. It features an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and best-in-class reverse recovery charge. The MOSFET is fully qualified according to JEDEC for industrial applications and operates with a junction temperature range of -55°C to 150°C.
Infineon’s answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ60R020CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPDQ60R020CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0200 ohms |
| QG | 186 nC |
