Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPDQ60R010S7

The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. Summary of Features Lowest RDS(on) Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS SSR and Solid state circuit breakers PLC Solar energy systems Battery and equipment protection Indoor commercial lighting control UPS LSEV Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing Smart Home & Building Telecommunication infrastructure Designers who used this product also designed with 2EDB7259K | Gate driver ICs ICE3AR0680JZ | CoolSET™ Fixed Frequency 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPT015N10N5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET BSO301SP H | P-Channel Power MOSFET IDDD16G65C6 | CoolSiC™ Schottky Diodes 2EDB7259K | Gate driver ICs ICE3AR0680JZ | CoolSET™ Fixed Frequency 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPT015N10N5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET BSO301SP H | P-Channel Power MOSFET IDDD16G65C6 | CoolSiC™ Schottky Diodes 1 2