The IPDQ60R007CM8 is a 600 V CoolMOS™ CM8 N-channel power MOSFET designed for high-efficiency switching applications such as power supplies, PFC stages, and LLC resonant converters. It is packaged in a PG-HDSOP-22 case with dimensions of 15.30 to 15.50 mm in length and 14.90 to 15.10 mm in width. The device has a maximum drain-source on-state resistance of 7 mΩ at 25°C, a pulsed drain current of 1100 A, and a continuous drain current of 288 A at TC=25°C. It features an integrated fast body diode with a maximum commutation speed of 1300 A/µs and an ESD class of 2 (HBM). The thermal resistance from junction to case is 0.1 K/W, and the device is fully qualified according to JEDEC for industrial applications.
IPDQ60R007CM8 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDQ60R007CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPDQ60R007CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0070 ohms |
| QG | 370 nC |
