The IPDD60R190G7 is a 600V CoolMOS™ G7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies. It is packaged in a PG-HDSOP-10 SMD format with a 115 mm footprint and features a 4-pin Kelvin source configuration to reduce parasitic source inductance (~3 nH). The device has a maximum continuous drain current of 19 A at Tₐ < 150°C, a pulsed drain current of 36 A, and an Rᔀₓ₉ᔀ₃ᔀₓ₁ᔀ₃ᔀ₃ᔀ₂ᔀ₁ of 190 mΩ at Tₐ = 25°C. Thermal resistance from junction to case is 1.65 °C/W, and junction temperature operates from -55°C to 150°C. The MOSFET is fully qualified according to JEDEC for industrial applications and meets MSL1 reflow soldering requirements with total Pb-free construction.
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.
The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R190G7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1900 ohms |
| QG | 18 nC |
