IPDD60R180CM8 is a 600 V CoolMOS™ CM8 silicon N-channel power MOSFET designed for high-efficiency switching applications such as PFC stages and LLC resonant converters. It is packaged in a PG-HDSOP-10 surface-mount package measuring 15.20-15.60 mm in length, 6.40-6.60 mm in width, and 2.20-2.35 mm in height. The device features a maximum on-state resistance of 180 mΩ, a pulsed drain current of 48 A, and an energy loss of 2.4 µJ at 400 V. The integrated fast body diode supports a maximum diode commutation speed of 1300 A/µs. The device is fully qualified according to JEDEC for industrial applications and meets ESD class 2 (HBM).
IPDD60R180CM8 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R180CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPDD60R180CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1800 ohms |
| QG | 17 nC |
