The IPDD60R145CFD7 is a 600V CoolMOS™ CFD7 power MOSFET designed for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC resonant topologies in server, telecom, and EV charging systems. It features an ultra-fast body diode, best-in-class reverse recovery charge (Qrr) of up to 0.72 µC, and low gate charge (Qg) of 28 nC. The device has a maximum drain-source on-state resistance (RDS(on)) of 145 mΩ and can handle a pulsed drain current of 51 A. It is packaged in a PG-HDSOP-10 surface-mount package with dimensions of 15.20-15.60 mm in length and 6.40-6.60 mm in width. The MOSFET is fully qualified according to JEDEC for industrial applications and meets standards for thermal robustness, with thermal resistance junction-to-case of 0.78 °C/W and junction-to-ambient of 62 °C/W on a minimal PCB footprint. It supports a maximum operating junction temperature of 150 °C.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R145CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1450 ohms |
| QG | 28 nC |
