The IPDD60R125CFD7 is a 600V CoolMOS™ CFD7 superjunction MOSFET designed for soft-switching applications such as phase-shift full-bridge and LLC resonant topologies. It comes in a PG-HDSOP-10 surface-mount package with a pulsed drain current rating of 58 A and a maximum on-state resistance of 125 mΩ. The device features an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and a typical gate charge of 31 nC. It is fully qualified according to JEDEC for industrial applications and supports operating junction temperatures from -55°C to 150°C.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R125CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1250 ohms |
| QG | 31 nC |
