The IPDD60R102G7 is a 600V CoolMOS™ G7 superjunction MOSFET in a PG-HDSOP-10 package with a 115mm² footprint, designed for high-efficiency power factor correction and LLC resonant converter applications. It features a 4-pin Kelvin source configuration to reduce parasitic source inductance (~3nH) and improved thermal performance with a junction-to-case thermal resistance of 0.9°C/W. The device has a maximum continuous drain current of 32A at TJ<150°C, an on-state resistance of 102mΩ at 25°C, a total gate charge of 34nC, and a peak pulsed drain current of 66A. It is fully qualified according to JEDEC for industrial applications, MSL1 compliant, and Pb-free. The package supports solder reflow up to 260°C and is suitable for high-current SMD designs up to 3kW.
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.
The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R102G7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1020 ohms |
| QG | 34 nC |
