The IPDD60R080G7 is a 600V CoolMOS™ G7 superjunction MOSFET in a PG-HDSOP-10 package, designed for high-current applications such as PFC and LLC topologies in server, telecom, and UPS systems. The package features a 4-pin Kelvin source configuration with approximately 3nH source inductance, an 115mm² footprint, and MSL1 compliance. It has a maximum continuous drain current of 40A at a junction temperature below 150°C, a pulsed drain current of 83A, and a drain-source on-resistance of 80mΩ at 25°C. Thermal resistance from junction to case is 0.72°C/W, and the device is fully qualified according to JEDEC for industrial applications.
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.
The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Summary of Features
Benefits
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R080G7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0800 ohms |
| QG | 42 nC |
