The IPDD60R075CFD7 is a 600V superjunction MOSFET designed for resonant topologies such as phase-shift full-bridge and LLC converters. It comes in a PG-HDSOP-10 package with dimensions of 15.20-15.60 mm in length, 6.40-6.60 mm in width, and 2.20-2.35 mm in height. It features a maximum on-state resistance of 75 mΩ, a gate charge of 51 nC, and a reverse recovery charge of 0.51-1.02 μC. The device supports a pulsed drain current of 97 A and a maximum junction temperature of 150°C. It is fully qualified according to JEDEC for industrial applications and offers enhanced dv/dt and diF/dt ruggedness for hard commutation. The thermal resistance from junction to case is 0.47 °C/W.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPDD60R075CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0750 ohms |
| QG | 51 nC |
