Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPDD60R050G7

Description
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg Innovative top-side cooling concept Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Hydrogen electrolysis Telecommunication infrastructure
  • 500V-950V N-Channel Power MOSFET - IPDD60R050G7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg Innovative top-side cooling concept Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Hydrogen electrolysis Telecommunication infrastructure
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Datasheet
Datasheet Summary
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The IPDD60R050G7 is a 600V CoolMOS™ G7 superjunction MOSFET in a PG-HDSOP-10 package, designed for high-efficiency power conversion in PFC and LLC topologies. It features a 4-pin Kelvin source configuration with approximately 3nH source inductance, enabling faster switching and reduced ringing. The device has a maximum drain-source on-state resistance of 50mΩ at 25°C, continuous drain current of 57A at TJ<150°C, and peak pulsed drain current of 135A. It is MSL1 compliant, Pb-free, and fully qualified for industrial applications according to JEDEC standards. The package supports improved thermal performance with a junction-to-case thermal resistance of 0.45°C/W.

Datasheet Summary
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The IPDD60R050G7 is a 600V CoolMOS™ G7 superjunction MOSFET in a PG-HDSOP-10 package, designed for high-efficiency power conversion in PFC and LLC topologies. It features a 4-pin Kelvin source configuration with approximately 3nH source inductance, enabling faster switching and reduced ringing. The device has a maximum drain-source on-state resistance of 50mΩ at 25°C, continuous drain current of 57A at TJ<150°C, and peak pulsed drain current of 135A. It is MSL1 compliant, Pb-free, and fully qualified for industrial applications according to JEDEC standards. The package supports improved thermal performance with a junction-to-case thermal resistance of 0.45°C/W.

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500V-950V N-Channel Power MOSFET - IPDD60R050G7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPDD60R050G7
500V-950V N-Channel Power MOSFET IPDD60R050G7
Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg Innovative top-side cooling concept Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) DIN rail power supplies Hydrogen electrolysis Telecommunication infrastructure

Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.


Summary of Features

  • Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
  • Innovative top-side cooling concept
  • Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
  • TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free

Benefits

  • Enabling highest energy efficiency
  • Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
  • Reduced parasitic source inductance improves e iciency and ease-of-use
  • Enables higher power density solutions
  • Exceeding the highest quality standards

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power
  • SMPS

Applications

  • 1-phase string inverter solutions
  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Hydrogen electrolysis
  • Telecommunication infrastructure
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPDD60R050G7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0500 ohms
QG 68 nC
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