Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD95R1K2P7

Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) LED lighting system designs LED strips and signage Light electric vehicles (LEV) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPD95R1K2P7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPD95R1K2P7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • OEM Souring - 1465693-IPD95R1K2P7 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) LED lighting system designs LED strips and signage Light electric vehicles (LEV) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD95R1K2P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD95R1K2P7
500V-950V N-Channel Power MOSFET IPD95R1K2P7
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) LED lighting system designs LED strips and signage Light electric vehicles (LEV) Designers who used this product also designed with BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET ICE5QSBG | PWM-QR (quasi resonant) Flyback ICs BSC007N04LS6 | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.

Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.


Summary of Features

  • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
  • Best-in-class DPAK RDS(on) of 450 mΩ
  • Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability

Benefits

  • Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings, and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns

Potential Applications

  • Lighting
  • Smart meter
  • Mobile phone charger
  • Notebook adaptor
  • AUX power supply
  • Industrial SMPS

Applications

  • 1-phase string inverter solutions
  • 48 V intermediate bus converter (IBC)
  • LED lighting system designs
  • LED strips and signage
  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • ICE5QSBG |
    PWM-QR (quasi resonant) Flyback ICs
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • ICE5QSBG |
    PWM-QR (quasi resonant) Flyback ICs
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • ICE5QSBG |
    PWM-QR (quasi resonant) Flyback ICs
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
Supplier's Site Datasheet
Transistors - IPD95R1K2P7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD95R1K2P7
Transistors IPD95R1K2P7
TO-252-3 MOSFETs ROHS

TO-252-3 MOSFETs ROHS

Supplier's Site
OEM Souring - 1465693-IPD95R1K2P7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
OEM Souring
1465693-IPD95R1K2P7
OEM Souring 1465693-IPD95R1K2P7
Category: OEM Souring Win Source Part Number: 1465693-IPD95R1K2P7 Manufacturer: Infineon Technologies

Category: OEM Souring
Win Source Part Number: 1465693-IPD95R1K2P7
Manufacturer: Infineon Technologies

Buy Now

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) Win Source Electronics
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD95R1K2P7 IPD95R1K2P7 1465693-IPD95R1K2P7
Product Name 500V-950V N-Channel Power MOSFET Transistors OEM Souring
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1.2 ohms
QG 15 nC
Unlock Full Specs
to access all available technical data