MOSFET P-CH 30V 90A TO252-31
Power Field-Effect Transistor
MOSFET P-CH 30V 90A TO252-31 Product overview: IPD90P03P4L04ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90P03P4L04ATM
P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: Automotive, AEC-Q101, OptiMOS®-P2
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 137W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Infineon MOSFET IPD90P03P4L04ATMA2
Infineon MOSFET IPD90P03P4L04ATMA2
Infineon MOSFET IPD90P03P4L04ATMA2
MOSFET P-CH 30V 90A TO252-31
MOSFET, AEC-Q101, P-CH, -30V, -90A, 137W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD90P03P4L04ATMA2 | IPD90P03P4L04ATMA2 | 278-IPD90P03P4L04ATMA2 | 448-IPD90P03P4L04ATMA2DKR-ND | 2207415 | IPD90P03P4L04ATMA2 | 51AH5913 | |
| Product Name | Single FETs, MOSFETs | 30V 90A TO252 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -30V, -90A, 137W Rohs Compliant Infineon | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 90000 milliamps | |||||||
| PD | 137000 milliwatts | 137 milliwatts | 137000 milliwatts |
