N-Channel 60V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
N-Channel 60V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
Infineon MOSFET IPD90N06S404ATMA2
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 60V 90A TO252-31 Product overview: IPD90N06S404ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N06S404ATMA
Win Source Part Number: 1159012-IPD90N06S404
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD90N06S4-04; IPD90N06S404ATMA1; SP001028762;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD90N06S404ATMA
Base Product Number: IPD90N
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 60V 90A TO252-31
MOSFET, N-CH, 60V, 175DEG C, 150W ROHS COMPLIANT: YES
MOSFET N-CH 60V 90A TO252-31
| DigiKey | RS Components, Ltd. | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPD90N06S404ATMA2DKR-ND | 2224677 | IPD90N06S404ATMA2 | 278-IPD90N06S404ATMA2 | 1159012-IPD90N06S404ATMA2 | IPD90N06S404ATMA2 | 39AH8912 | IPD90N06S404ATMA2 |
| Product Name | Single FETs, MOSFETs | MOSFETs | 60V 90A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 175Deg C, 150W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | PG-TO252-3 | Tape & Reel (TR) | SOT3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Grade / Operating Range | Automotive | |||||||
| rDS(on) | 0.0038 ohms | |||||||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
