The Infineon MOSFET, part number 34AC1691, is an N-channel enhancement mode power transistor designed for automotive applications, meeting AEC-Q101 standards. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 90A at a case temperature of 25¬8C. The device has a low on-resistance (R_DS(on)) of 3.2 m,Ѷ at V_GS of 10V, ensuring efficient performance in power management applications. This MOSFET is qualified for operation at high temperatures, with a maximum junction temperature of 175¬8C and is RoHS compliant, indicating it is environmentally friendly. It is also 100% avalanche tested, providing reliability in demanding conditions. The package type is PG-TO252-3-313, suitable for surface mount applications, and it has a thermal resistance from junction to case (R_thJC) of 2.1 K/W, which aids in thermal management. Engineers considering this component for their projects will find it suitable for high-performance applications requiring robust thermal and electrical characteristics.
MOSFET N-CH 40V 90A TO252-3 Product overview: IPD90N04S4L04ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N04S4L04ATM
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 40V 90A TO252-3
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
MOSFET N-CH 40V 90A TO252-3
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD90N04S4L04ATMA1 | 2291836 | IPD90N04S4L04ATMA1TR-ND | IPD90N04S4L04ATMA1 | IPD90N04S4L04ATMA1 | IPD90N04S4L04ATMA1 | IPD90N04S4L04ATMA1 | 34AC1691 |
| Product Name | 40V 90A TO252 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| PD | 71 milliwatts | 71000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
