Infineon Technologies AG 40V 90A TO252 MOSFET Transistor IPD90N04S4L04ATMA1

Description
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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Description
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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Datasheet
Datasheet Summary
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The Infineon MOSFET, part number 34AC1691, is an N-channel enhancement mode power transistor designed for automotive applications, meeting AEC-Q101 standards. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 90A at a case temperature of 25¬8C. The device has a low on-resistance (R_DS(on)) of 3.2 m,Ѷ at V_GS of 10V, ensuring efficient performance in power management applications. This MOSFET is qualified for operation at high temperatures, with a maximum junction temperature of 175¬8C and is RoHS compliant, indicating it is environmentally friendly. It is also 100% avalanche tested, providing reliability in demanding conditions. The package type is PG-TO252-3-313, suitable for surface mount applications, and it has a thermal resistance from junction to case (R_thJC) of 2.1 K/W, which aids in thermal management. Engineers considering this component for their projects will find it suitable for high-performance applications requiring robust thermal and electrical characteristics.

Datasheet Summary
Powered by GS/AI

The Infineon MOSFET, part number 34AC1691, is an N-channel enhancement mode power transistor designed for automotive applications, meeting AEC-Q101 standards. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 90A at a case temperature of 25¬8C. The device has a low on-resistance (R_DS(on)) of 3.2 m,Ѷ at V_GS of 10V, ensuring efficient performance in power management applications. This MOSFET is qualified for operation at high temperatures, with a maximum junction temperature of 175¬8C and is RoHS compliant, indicating it is environmentally friendly. It is also 100% avalanche tested, providing reliability in demanding conditions. The package type is PG-TO252-3-313, suitable for surface mount applications, and it has a thermal resistance from junction to case (R_thJC) of 2.1 K/W, which aids in thermal management. Engineers considering this component for their projects will find it suitable for high-performance applications requiring robust thermal and electrical characteristics.

Suppliers

Company
Product
Description
Supplier Links
 - IPD90N04S4L04ATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 90A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Supplier's Site Datasheet
Singapore
40V 90A TO252 MOSFET Transistor
278-IPD90N04S4L04ATMA1
40V 90A TO252 MOSFET Transistor 278-IPD90N04S4L04ATMA1
MOSFET N-CH 40V 90A TO252-3 Product overview: IPD90N04S4L04ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N04S4L04ATM A1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 90A TO252-3 Product overview: IPD90N04S4L04ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N04S4L04ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD90N04S4L04ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N04S4L04ATMA1TR-ND
Single FETs, MOSFETs IPD90N04S4L04ATMA1TR-ND
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N04S4L04ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N04S4L04ATMA1DKR-ND
Single FETs, MOSFETs IPD90N04S4L04ATMA1DKR-ND
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N04S4L04ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD90N04S4L04ATMA1CT-ND
Single FETs, MOSFETs IPD90N04S4L04ATMA1CT-ND
N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
Single FETs, MOSFETs - IPD90N04S4L04ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD90N04S4L04ATMA1
Single FETs, MOSFETs IPD90N04S4L04ATMA1
MOSFET N-CH 40V 90A TO252-3

MOSFET N-CH 40V 90A TO252-3

Supplier's Site Datasheet
MOSFETs - 2291836 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2291836
MOSFETs 2291836
Infineon IPD90N04S4L04ATMA1

Infineon IPD90N04S4L04ATMA1

Supplier's Site
MOSFETs - 2291837 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2291837
MOSFETs 2291837
Infineon IPD90N04S4L04ATMA1

Infineon IPD90N04S4L04ATMA1

Supplier's Site
MOSFETs - 2291837P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2291837P
MOSFETs 2291837P
Infineon IPD90N04S4L04ATMA1

Infineon IPD90N04S4L04ATMA1

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD90N04S4L04ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD90N04S4L04ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD90N04S4L04ATMA1
MOSFET N-CH 40V 90A TO252-3

MOSFET N-CH 40V 90A TO252-3

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon - 34AC1691 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon
34AC1691
Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon 34AC1691
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

Buy Now Datasheet

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD90N04S4L04ATMA1 278-IPD90N04S4L04ATMA1 IPD90N04S4L04ATMA1TR-ND IPD90N04S4L04ATMA1 2291836 IPD90N04S4L04ATMA1 34AC1691 IPD90N04S4L04ATMA1
Product Name 40V 90A TO252 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
rDS(on) 0.0038 ohms 0.0032 ohms
Package Type PG-TO252-3 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
MOSFET Operating Mode Enhancement
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