Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 40V 86A TO252-3 Product overview: IPD90N04S405ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 86A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 86A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD90N04S405ATMA
N-Channel 40V 86A (Tc) 65W (Tc) Surface Mount PG-TO252-3-313
N-Channel 40V 86A (Tc) 65W (Tc) Surface Mount PG-TO252-3-313
N-Channel 40V 86A (Tc) 65W (Tc) Surface Mount PG-TO252-3-313
Manufacturer: Infineon Technologies
Win Source Part Number: 1010613-IPD90N04S405
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3-313
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 86A (Tc)
Gate-Source Threshold Voltage: 4V @ 30μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 2960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 86A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Infineon MOSFET IPD90N04S405ATMA1
MOSFET N-CH 40V 86A TO252-3
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD90N04S405ATMA1 | 278-IPD90N04S405ATMA1 | IPD90N04S405ATMA1TR-ND | 1010613-IPD90N04S405ATMA1 | 2183053 | IPD90N04S405ATMA1 | IPD90N04S405ATMA1 | 12AC9719 |
| Product Name | 40V 86A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD90N04S405ATMA1 | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| rDS(on) | 0.0052 ohms | 0.0043 ohms | ||||||
| Package Type | PG-TO252-3 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); PG-TO252-3-313 | TO-252 (DPAK); TO-252 | Surface Mount | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| MOSFET Operating Mode | Enhancement |
