Infineon Technologies AG P-Channel Power MOSFET IPD900P06NM

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features VDS = -60V Wide RDS(on) range Normal Level and Logic Level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial drives Applications Cordless vacuum cleaners General purpose motor drive - variating frequency and voltage Home appliances Washing and drying Designers who used this product also designed with IRF7103 | N-Channel Power MOSFET IKZA40N120CH7 | IGBT discretes IRLML0060 | N-Channel Power MOSFET IKZA75N65SS5 | IGBT discretes ICE5QR0680AG | CoolSET™ Quasi Resonant IKW30N60H3 | IGBT discretes IPB600N25N3 G | N-Channel Power MOSFET IKFW50N65DH5 | IGBT discretes 2EDL05I06PF | Gate driver ICs IPD122N10N3 G | N-Channel Power MOSFET IRF7103 | N-Channel Power MOSFET IKZA40N120CH7 | IGBT discretes IRLML0060 | N-Channel Power MOSFET IKZA75N65SS5 | IGBT discretes ICE5QR0680AG | CoolSET™ Quasi Resonant IKW30N60H3 | IGBT discretes IPB600N25N3 G | N-Channel Power MOSFET IKFW50N65DH5 | IGBT discretes 1 2 3

TO-252-3 MOSFETs ROHS