Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPD80R900P7 IPD80R900P7

Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT General purpose motor drive - variating frequency and voltage LED lighting system designs LED strips and signage Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes 2EDR8258X | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1ED3125MU12F | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust BSC052N03LS | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT General purpose motor drive - variating frequency and voltage LED lighting system designs LED strips and signage Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes 2EDR8258X | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1ED3125MU12F | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust BSC052N03LS | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPD80R900P7 - IPD80R900P7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPD80R900P7
IPD80R900P7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPD80R900P7 IPD80R900P7
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT General purpose motor drive - variating frequency and voltage LED lighting system designs LED strips and signage Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes 2EDR8258X | Gate driver ICs XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 1ED3125MU12F | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust BSC052N03LS | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC0504NSI | N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.


Summary of Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Potential Applications

  • Adapter
  • LED
  • Audio
  • Industrial SMPS
  • AUX power

Applications

  • 48 V intermediate bus converter (IBC)
  • Connected and smart lighting for IoT
  • General purpose motor drive - variating frequency and voltage
  • LED lighting system designs
  • LED strips and signage

Designers who used this product also designed with


  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • BSC0504NSI |
    N-Channel Power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • 2EDR8258X |
    Gate driver ICs
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 1ED3125MU12F |
    Gate driver ICs
  • OPTIGA TRUST M EXPRESS |
    OPTIGA™ Trust
  • BSC052N03LS |
    N-Channel Power MOSFET
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • BSC0504NSI |
    N-Channel Power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
285-IPD80R900P7
MOSFET Transistor 285-IPD80R900P7
POWER FIELD-EFFECT TRANSISTOR Product overview: IPD80R900P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD80R900P7 can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR Product overview: IPD80R900P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD80R900P7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Specialized ICs - IPD80R900P7 - ODG (Origin Data Global)
Shenzhen, China
Specialized ICs
IPD80R900P7
Specialized ICs IPD80R900P7
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPD80R900P7 285-IPD80R900P7 IPD80R900P7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPD80R900P7 MOSFET Transistor Specialized ICs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.9000 ohms
QG 15 nC
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