Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPD80R4K5P7ATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1325364-IPD80R4K5P7A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 13W (Tc) Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPD80R4K5P7ATMA1TR,I PD80R4K5P7ATMA1CT,SP 001422632,IPD80R4K5P 7ATMA1DKR Base Product Number: IPD80R4 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1325364-IPD80R4K5P7A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 13W (Tc) Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPD80R4K5P7ATMA1TR,I PD80R4K5P7ATMA1CT,SP 001422632,IPD80R4K5P 7ATMA1DKR Base Product Number: IPD80R4 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325364-IPD80R4K5P7ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325364-IPD80R4K5P7ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325364-IPD80R4K5P7ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1325364-IPD80R4K5P7A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 13W (Tc) Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPD80R4K5P7ATMA1TR,I PD80R4K5P7ATMA1CT,SP 001422632,IPD80R4K5P 7ATMA1DKR Base Product Number: IPD80R4 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: Infineon Technologies
Win Source Part Number: 1325364-IPD80R4K5P7ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 13W (Tc)
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPD80R4K5P7ATMA1TR,IPD80R4K5P7ATMA1CT,SP001422632,IPD80R4K5P7ATMA1DKR
Base Product Number: IPD80R4
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
MOSFETs - 2605150P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605150P
MOSFETs 2605150P
Infineon MOSFET IPD80R4K5P7

Infineon MOSFET IPD80R4K5P7

Supplier's Site
MOSFETs - 2605149 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605149
MOSFETs 2605149
Infineon MOSFET IPD80R4K5P7

Infineon MOSFET IPD80R4K5P7

Supplier's Site
MOSFETs - 2605150 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605150
MOSFETs 2605150
Infineon MOSFET IPD80R4K5P7

Infineon MOSFET IPD80R4K5P7

Supplier's Site
Singapore, Singapore
800V 1.5A TO252 MOSFET Transistor
278-IPD80R4K5P7ATMA1
800V 1.5A TO252 MOSFET Transistor 278-IPD80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A TO252 Product overview: IPD80R4K5P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 1.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80R4K5P7ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 800V 1.5A TO252 Product overview: IPD80R4K5P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 1.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80R4K5P7ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPD80R4K5P7ATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 1.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 1.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD80R4K5P7ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD80R4K5P7ATMA1TR-ND
Single FETs, MOSFETs IPD80R4K5P7ATMA1TR-ND
N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD80R4K5P7ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD80R4K5P7ATMA1DKR-ND
Single FETs, MOSFETs IPD80R4K5P7ATMA1DKR-ND
N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD80R4K5P7ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD80R4K5P7ATMA1CT-ND
Single FETs, MOSFETs IPD80R4K5P7ATMA1CT-ND
N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 1.5A (Tc) 13W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
MOSFET

MOSFET

Buy Now Datasheet
MOSFET N-CH 800V 1.5A DPAK - 376-IPD80R4K5P7ATMA1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 1.5A DPAK
376-IPD80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A DPAK 376-IPD80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A DPAK

MOSFET N-CH 800V 1.5A DPAK

Supplier's Site
Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity Infineon - 34AC1690 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity Infineon
34AC1690
Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity Infineon 34AC1690
MOSFET, N-CH, 800V, 1.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 800V, 1.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD80R4K5P7ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD80R4K5P7ATMA1
Single FETs, MOSFETs IPD80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A TO252

MOSFET N-CH 800V 1.5A TO252

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD80R4K5P7ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD80R4K5P7ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A TO252

MOSFET N-CH 800V 1.5A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1325364-IPD80R4K5P7ATMA1 2605150P 278-IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1TR-ND IPD80R4K5P7ATMA1 376-IPD80R4K5P7ATMA1 34AC1690 IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs 800V 1.5A TO252 MOSFET Transistor Single FETs, MOSFETs MOSFET MOSFET N-CH 800V 1.5A DPAK Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity Infineon Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 13000 milliwatts 13 milliwatts 13000 milliwatts 13000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252 Tape & Reel (TR) PG-TO252-3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3
Packing Method Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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