Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD80R4K5P7

Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Designers who used this product also designed with ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • 500V-950V N-Channel Power MOSFET - IPD80R4K5P7 - Infineon Technologies AG
    Infineon Technologies AG
  • Specialized ICs - IPD80R4K5P7 - 724021-IPD80R4K5P7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPD80R4K5P7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Designers who used this product also designed with ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
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Datasheet
Datasheet Summary
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The IPD80R4K5P7 is an 800V N-channel CoolMOS™ P7 power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a DPAK (PG-TO252-3) with dimensions of 6.22 mm max length, 6.73 mm max width, and 10.48 mm max height. The device features a maximum on-state resistance of 4.5 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrated ESD protection rated at HBM Class 1C. It is fully qualified for industrial applications according to JEDEC standards.

Datasheet Summary
Powered by GS/AI

The IPD80R4K5P7 is an 800V N-channel CoolMOS™ P7 power MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a DPAK (PG-TO252-3) with dimensions of 6.22 mm max length, 6.73 mm max width, and 10.48 mm max height. The device features a maximum on-state resistance of 4.5 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrated ESD protection rated at HBM Class 1C. It is fully qualified for industrial applications according to JEDEC standards.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD80R4K5P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD80R4K5P7
500V-950V N-Channel Power MOSFET IPD80R4K5P7
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Designers who used this product also designed with ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 ILD6150 | DC-DC LED Driver IC XMC1301-T038X0064 AB | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.


Summary of Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Potential Applications

  • Adapter
  • LED
  • Audio
  • Industrial SMPS
  • AUX power

Designers who used this product also designed with


  • ILD6150 |
    DC-DC LED Driver IC
  • XMC1301-T038X0064 AB |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • ILD6150 |
    DC-DC LED Driver IC
  • XMC1301-T038X0064 AB |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • ILD6150 |
    DC-DC LED Driver IC
  • XMC1301-T038X0064 AB |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
285-IPD80R4K5P7
MOSFET Transistor 285-IPD80R4K5P7
POWER FIELD-EFFECT TRANSISTOR Product overview: IPD80R4K5P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD80R4K5P7 can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR Product overview: IPD80R4K5P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD80R4K5P7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Specialized ICs - IPD80R4K5P7 - 724021-IPD80R4K5P7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Specialized ICs - IPD80R4K5P7
724021-IPD80R4K5P7
Specialized ICs - IPD80R4K5P7 724021-IPD80R4K5P7
Manufacturer: Infineon Technologies Win Source Part Number: 724021-IPD80R4K5P7 Manufacturer Homepage: www.infineon.com Reference case: TO252 Reference Date Code: 17+Rohs Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 724021-IPD80R4K5P7
Manufacturer Homepage: www.infineon.com
Reference case: TO252
Reference Date Code: 17+Rohs
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now
Single FETs, MOSFETs - IPD80R4K5P7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD80R4K5P7
Single FETs, MOSFETs IPD80R4K5P7
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD80R4K5P7 285-IPD80R4K5P7 724021-IPD80R4K5P7 IPD80R4K5P7
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor Specialized ICs - IPD80R4K5P7 Single FETs, MOSFETs
Polarity N-Channel; N N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 4.5 ohms
QG 4 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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