Win Source Part Number: 963347-IPD80R3K3P7AT
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 18W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPD80R3K3P7ATMA1IPD8
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IFEINFIPD80R3K3P7ATM
Base Product Number: IPD80R3
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 800V 1.9A TO252-3 Product overview: IPD80R3K3P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 1.9A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.9A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80R3K3P7ATMA1
MOSFET N-CH 800V 1.9A TO252-3
MOSFET N-CH 800V 1.9A TO252-3
MOSFET, N-CH, 800V, 1.9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 963347-IPD80R3K3P7ATMA1 | IPD80R3K3P7ATMA1DKR-ND | 278-IPD80R3K3P7ATMA1 | 2149050 | IPD80R3K3P7ATMA1 | IPD80R3K3P7ATMA1 | 24AC9044 | IPD80R3K3P7ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 800V 1.9A TO252 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 1.9A, To-252; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 18000 milliwatts | 18 milliwatts | 18000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | TO-3 | |
| MOSFET Operating Mode | Enhancement |
