Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD80R360P7

Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications LED strips and signage Smart buildings
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Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications LED strips and signage Smart buildings
Request a Quote
Datasheet
Datasheet Summary
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The IPD80R360P7 is an 800V N-channel superjunction MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a DPAK (PG-TO252-3) with dimensions up to 10.48 mm in height and 6.73 mm in width. The device features a maximum drain-source on-state resistance of 0.36 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrated ESD protection compliant with HBM Class 2. It has a continuous drain current of 18.3 A at TC=25°C, a pulsed drain current of 34 A, and a power dissipation of 84 W at TC=25°C. Thermal resistance from junction to case is 1.5 °C/W, and from junction to ambient is 62 °C/W on a minimal footprint PCB. The device is fully qualified according to JEDEC for industrial applications.

Datasheet Summary
Powered by GS/AI

The IPD80R360P7 is an 800V N-channel superjunction MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a DPAK (PG-TO252-3) with dimensions up to 10.48 mm in height and 6.73 mm in width. The device features a maximum drain-source on-state resistance of 0.36 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrated ESD protection compliant with HBM Class 2. It has a continuous drain current of 18.3 A at TC=25°C, a pulsed drain current of 34 A, and a power dissipation of 84 W at TC=25°C. Thermal resistance from junction to case is 1.5 °C/W, and from junction to ambient is 62 °C/W on a minimal footprint PCB. The device is fully qualified according to JEDEC for industrial applications.

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500V-950V N-Channel Power MOSFET - IPD80R360P7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD80R360P7
500V-950V N-Channel Power MOSFET IPD80R360P7
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications LED strips and signage Smart buildings

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.


Summary of Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Potential Applications

  • Adapter
  • LED
  • Audio
  • Industrial SMPS
  • AUX power

Applications

  • LED strips and signage
  • Smart buildings
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD80R360P7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3600 ohms
QG 30 nC
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