The IPD80R360P7 is an 800V N-channel superjunction MOSFET designed for hard and soft switching flyback topologies in low-power applications such as LED lighting, chargers, audio, and industrial power. It is packaged in a DPAK (PG-TO252-3) with dimensions up to 10.48 mm in height and 6.73 mm in width. The device features a maximum drain-source on-state resistance of 0.36 Ω, a gate threshold voltage of 3 V with a variation of ±0.5 V, and integrated ESD protection compliant with HBM Class 2. It has a continuous drain current of 18.3 A at TC=25°C, a pulsed drain current of 34 A, and a power dissipation of 84 W at TC=25°C. Thermal resistance from junction to case is 1.5 °C/W, and from junction to ambient is 62 °C/W on a minimal footprint PCB. The device is fully qualified according to JEDEC for industrial applications.
A new benchmark in efficiency and thermal performance
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD80R360P7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.3600 ohms |
| QG | 30 nC |