MOSFET N-CH 800V 5.7A TO252-3
N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
800V CoolMOS CE Power Transistor
Manufacturer: Infineon Technologies
Win Source Part Number: 1324765-IPD80R1K0CEA
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPD80R1K0CEATMA1-ND,
Base Product Number: IPD80R1
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-Channel 800V 18A CoolMOS TO252
MOSFET N-Channel 800V 18A CoolMOS TO252
MOSFET N-Channel 800V 18A CoolMOS TO252
MOSFET N-CH 800V 5.7A TO252-3
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPD80R1K0CEATMA1 | IPD80R1K0CEATMA1DKR-ND | IPD80R1K0CEATMA1 | 1324765-IPD80R1K0CEATMA1 | 9140223 | 9140223P | IPD80R1K0CEATMA1 | IPD80R1K0CEATMA1 | 97Y1825 | 376-IPD80R1K0CEATMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 5.7A, To-252-3; Channel Type Infineon | N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 800 volts | |||||||||
| IDSS | 5700 milliamps | 5700 milliamps | ||||||||
| PD | 83000 milliwatts | 83000 milliwatts |
