MOSFET N-CH 800V 5.7A TO252-3
MOSFET N-CH 800V 5.7A TO252-3 Product overview: IPD80R1K0CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD80R1K0CEATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 1324765-IPD80R1K0CEA
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPD80R1K0CEATMA1-ND,
Base Product Number: IPD80R1
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
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N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
MOSFET N-CH 800V 5.7A TO252-3
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD80R1K0CEATMA1 | 278-IPD80R1K0CEATMA1 | 1324765-IPD80R1K0CEATMA1 | IPD80R1K0CEATMA1 | 9140223 | 9140223P | IPD80R1K0CEATMA1DKR-ND | 97Y1825 | 376-IPD80R1K0CEATMA1 | IPD80R1K0CEATMA1 | IPD80R1K0CEATMA1 |
| Product Name | Single FETs, MOSFETs | 800V 5.7A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 5.7A, To-252-3; Channel Type Infineon | N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 800 volts | 800 volts | |||||||||
| IDSS | 5700 milliamps | 5700 milliamps | |||||||||
| PD | 83000 milliwatts | 83 milliwatts | 83000 milliwatts |
