POWER FIELD-EFFECT TRANSISTOR, 1
Manufacturer: Infineon Technologies
Win Source Part Number: 746248-IPD78CN10NG
Manufacturer Homepage: www.infineon.com
Reference case: PG-TO252
Reference Date Code: 1034+
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: IPD78CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD78CN10NG can be used for catalog matching and distributor lookup.
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD78CN10NG | 746248-IPD78CN10NG | 285-IPD78CN10NG |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD78CN10NG | MOSFET Transistor |
| Polarity | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 100 volts | ||
| IDSS | 13000 milliamps |
