Infineon Technologies AG Single FETs, MOSFETs IPD78CN10NG

Description
POWER FIELD-EFFECT TRANSISTOR, 1
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Description
POWER FIELD-EFFECT TRANSISTOR, 1
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - IPD78CN10NG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD78CN10NG
Single FETs, MOSFETs IPD78CN10NG
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD78CN10NG - 746248-IPD78CN10NG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD78CN10NG
746248-IPD78CN10NG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD78CN10NG 746248-IPD78CN10NG
Manufacturer: Infineon Technologies Win Source Part Number: 746248-IPD78CN10NG Manufacturer Homepage: www.infineon.com Reference case: PG-TO252 Reference Date Code: 1034+ Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 746248-IPD78CN10NG
Manufacturer Homepage: www.infineon.com
Reference case: PG-TO252
Reference Date Code: 1034+
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now
MOSFET Transistor 285-IPD78CN10NG
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: IPD78CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD78CN10NG can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: IPD78CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD78CN10NG can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD78CN10NG 746248-IPD78CN10NG 285-IPD78CN10NG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD78CN10NG MOSFET Transistor
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 13000 milliamps
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