Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1 IPD70R900P7SAUMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1006936-IPD70R900P7S AUMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 60μA Max Gate Charge: 6.8nC @ 10V Max Input Capacitance: 211pF @ 400V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 900 mOhm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1006936-IPD70R900P7S AUMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 60μA Max Gate Charge: 6.8nC @ 10V Max Input Capacitance: 211pF @ 400V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 900 mOhm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1 - 1006936-IPD70R900P7SAUMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1
1006936-IPD70R900P7SAUMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1 1006936-IPD70R900P7SAUMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1006936-IPD70R900P7S AUMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 60μA Max Gate Charge: 6.8nC @ 10V Max Input Capacitance: 211pF @ 400V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 900 mOhm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1006936-IPD70R900P7SAUMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 60μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 211pF @ 400V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 900 mOhm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
700V 6A TO252 MOSFET Transistor
278-IPD70R900P7SAUMA1
700V 6A TO252 MOSFET Transistor 278-IPD70R900P7SAUMA1
MOSFET N-CH 700V 6A TO252-3 Product overview: IPD70R900P7SAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD70R900P7SAUMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 700V 6A TO252-3 Product overview: IPD70R900P7SAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD70R900P7SAUMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2144394P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144394P
MOSFETs 2144394P
Infineon MOSFET IPD70R900P7SAUMA1

Infineon MOSFET IPD70R900P7SAUMA1

Supplier's Site
MOSFETs - 2144394 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144394
MOSFETs 2144394
Infineon MOSFET IPD70R900P7SAUMA1

Infineon MOSFET IPD70R900P7SAUMA1

Supplier's Site
MOSFETs - 2144393 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144393
MOSFETs 2144393
Infineon MOSFET IPD70R900P7SAUMA1

Infineon MOSFET IPD70R900P7SAUMA1

Supplier's Site
Single FETs, MOSFETs - IPD70R900P7SAUMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD70R900P7SAUMA1TR-ND
Single FETs, MOSFETs IPD70R900P7SAUMA1TR-ND
N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD70R900P7SAUMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD70R900P7SAUMA1CT-ND
Single FETs, MOSFETs IPD70R900P7SAUMA1CT-ND
N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD70R900P7SAUMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD70R900P7SAUMA1DKR-ND
Single FETs, MOSFETs IPD70R900P7SAUMA1DKR-ND
N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD70R900P7SAUMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD70R900P7SAUMA1
Single FETs, MOSFETs IPD70R900P7SAUMA1
MOSFET N-CH 700V 6A TO252-3

MOSFET N-CH 700V 6A TO252-3

Supplier's Site Datasheet
MOSFET

MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD70R900P7SAUMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD70R900P7SAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD70R900P7SAUMA1
MOSFET N-CH 700V 6A TO252-3

MOSFET N-CH 700V 6A TO252-3

Supplier's Site
Mosfet, N-Ch, 700V, 6A, 150Deg C, 30.5W; Channel Type Infineon - 43AC3273 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 700V, 6A, 150Deg C, 30.5W; Channel Type Infineon
43AC3273
Mosfet, N-Ch, 700V, 6A, 150Deg C, 30.5W; Channel Type Infineon 43AC3273
MOSFET, N-CH, 700V, 6A, 150DEG C, 30.5W; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 700V, 6A, 150DEG C, 30.5W; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1006936-IPD70R900P7SAUMA1 278-IPD70R900P7SAUMA1 2144394P 2144394 IPD70R900P7SAUMA1TR-ND IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 43AC3273
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1 700V 6A TO252 MOSFET Transistor MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 700V, 6A, 150Deg C, 30.5W; Channel Type Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 700 volts 700 volts 700 volts
PD 30500 milliwatts 30.5 milliwatts 30500 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3; TO-252 (DPAK); PG-TO252-3 Tape & Reel (TR) TO-252 (DPAK); TO-252 TO-252 (DPAK); Dpak (to-252) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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