N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3
N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3
N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 700V 6A TO252-3
Infineon MOSFET IPD70R900P7SAUMA1
MOSFET N-CH 700V 6A TO252-3 Product overview: IPD70R900P7SAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD70R900P7SAUMA
Manufacturer: Infineon Technologies
Win Source Part Number: 1006936-IPD70R900P7S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 60μA
Max Gate Charge: 6.8nC @ 10V
Max Input Capacitance: 211pF @ 400V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 900 mOhm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-CH 700V 6A TO252-3
MOSFET, N-CH, 700V, 6A, 150DEG C, 30.5W; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD70R900P7SAUMA1TR-ND | IPD70R900P7SAUMA1 | 2144394P | 2144394 | 278-IPD70R900P7SAUMA1 | 1006936-IPD70R900P7SAUMA1 | IPD70R900P7SAUMA1 | 43AC3273 | IPD70R900P7SAUMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | 700V 6A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD70R900P7SAUMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 700V, 6A, 150Deg C, 30.5W; Channel Type Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | Tape & Reel (TR) | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 700 volts | 700 volts | 700 volts | ||||||
| IDSS | 6000 milliamps | 6000 milliamps |
