Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD70R600P7S

Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers DIN rail power supplies LED strips and signage Semiconductor solutions for home entertainment applications Designers who used this product also designed with BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET
  • 500V-950V N-Channel Power MOSFET - IPD70R600P7S - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPD70R600P7S - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers DIN rail power supplies LED strips and signage Semiconductor solutions for home entertainment applications Designers who used this product also designed with BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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The IPD70R600P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive applications such as chargers, adapters, and lighting. It is packaged in a DPAK (PG-TO 252-3) and has a maximum continuous drain current of 8.5 A at TC=100°C and a pulsed drain current of 20.5 A. The device features a maximum on-resistance of 0.6 Ω, a typical gate charge of 10.5 nC, and an output switching energy of 1.2 µJ at 400V. It includes integrated ESD protection with a human body model rating of Class 2, and operates within a junction temperature range of -40°C to 150°C. Thermal resistance from junction to case is 2.9 °C/W, and junction-to-ambient is 62 °C/W on a minimal footprint PCB.

Datasheet Summary
Powered by GS/AI

The IPD70R600P7S is a 700V CoolMOS™ P7 superjunction MOSFET designed for cost-sensitive applications such as chargers, adapters, and lighting. It is packaged in a DPAK (PG-TO 252-3) and has a maximum continuous drain current of 8.5 A at TC=100°C and a pulsed drain current of 20.5 A. The device features a maximum on-resistance of 0.6 Ω, a typical gate charge of 10.5 nC, and an output switching energy of 1.2 µJ at 400V. It includes integrated ESD protection with a human body model rating of Class 2, and operates within a junction temperature range of -40°C to 150°C. Thermal resistance from junction to case is 2.9 °C/W, and junction-to-ambient is 62 °C/W on a minimal footprint PCB.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD70R600P7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD70R600P7S
500V-950V N-Channel Power MOSFET IPD70R600P7S
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers DIN rail power supplies LED strips and signage Semiconductor solutions for home entertainment applications Designers who used this product also designed with BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET BSC900N20NS3 G | N-Channel Power MOSFET ESD128-B1-W0201 | Low capacitance diodes for ESD protection BSC12DN20NS3 G | N-Channel Power MOSFET

Infineon’s answer for flyback topologies

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

Summary of Features

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
    • Low switching losses (E oss)
    • Highly efficient
    • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

Benefits

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

Potential Applications

  • Charger
  • Adapter
  • TV
  • Lighting
  • Audio
  • Aux power

Applications

  • Adapters and chargers
  • DIN rail power supplies
  • LED strips and signage
  • Semiconductor solutions for home entertainment applications

Designers who used this product also designed with


  • BSC900N20NS3 G |
    N-Channel Power MOSFET
  • ESD128-B1-W0201 |
    Low capacitance diodes for ESD protection
  • BSC12DN20NS3 G |
    N-Channel Power MOSFET
  • BSC900N20NS3 G |
    N-Channel Power MOSFET
  • ESD128-B1-W0201 |
    Low capacitance diodes for ESD protection
  • BSC12DN20NS3 G |
    N-Channel Power MOSFET
  • BSC900N20NS3 G |
    N-Channel Power MOSFET
  • ESD128-B1-W0201 |
    Low capacitance diodes for ESD protection
  • BSC12DN20NS3 G |
    N-Channel Power MOSFET
Supplier's Site Datasheet
Transistors - IPD70R600P7S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD70R600P7S
Transistors IPD70R600P7S
700V 8.5A 43.1W 600mΩ@10V,1.8A 3.5V@90uA 1 N-Channel TO-252-3 MOSFETs ROHS

700V 8.5A 43.1W 600mΩ@10V,1.8A 3.5V@90uA 1 N-Channel TO-252-3 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPD70R600P7S
Triode/MOS Tube/Transistor >> MOSFETs IPD70R600P7S
700V 8.5A 43.1W 600mΩ@10V,1.8A 3.5V@90uA N Channel TO-252-3 MOSFETs ROHS

700V 8.5A 43.1W 600mΩ@10V,1.8A 3.5V@90uA N Channel TO-252-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD70R600P7S IPD70R600P7S IPD70R600P7S
Product Name 500V-950V N-Channel Power MOSFET Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.6000 ohms 0.6000 ohms
QG 10.5 nC
TJ -40 to 150 C (-40 to 302 F)
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