Infineon’s answer for flyback topologies
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Efficiency and thermals
Ease-of-use
EMI behavior
Summary of Features
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Benefits
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
Potential Applications
Charger
Adapter
TV
Lighting
Audio
Aux power
Applications
Adapters and chargers
DIN rail power supplies
LED strips and signage
Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
BSC900N20NS3 G | N-Channel Power MOSFET
ESD128-B1-W0201 | Low capacitance diodes for ESD protection
BSC12DN20NS3 G | N-Channel Power MOSFET
BSC900N20NS3 G | N-Channel Power MOSFET
ESD128-B1-W0201 | Low capacitance diodes for ESD protection
BSC12DN20NS3 G | N-Channel Power MOSFET
BSC900N20NS3 G | N-Channel Power MOSFET
ESD128-B1-W0201 | Low capacitance diodes for ESD protection
BSC12DN20NS3 G | N-Channel Power MOSFET
Infineon’s answer for flyback topologies
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
- Efficiency and thermals
- Ease-of-use
- EMI behavior
Summary of Features
- Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
- Highly performant technology
- Low switching losses (E oss)
- Highly efficient
- Excellent thermal behavior
- Allowing high speed switching
- Integrated protection Zener diode
- Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
- Finely graduated portfolio
Benefits
- Cost competitive technology
- Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
- Further efficiency gain at higher switching speed
- Supporting less magnetic size with lower BOM costs
- High ESD ruggedness up to HBM Class 2 level
- Easy to drive and design-in
- Enabler for smaller form factors and high power density designs
- Excellent choice in selecting the best fitting product
Potential Applications
- Charger
- Adapter
- TV
- Lighting
- Audio
- Aux power
Applications
- Adapters and chargers
- DIN rail power supplies
- LED strips and signage
- Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
- BSC900N20NS3 G |
N-Channel Power MOSFET
- ESD128-B1-W0201 |
Low capacitance diodes for ESD protection
- BSC12DN20NS3 G |
N-Channel Power MOSFET
- BSC900N20NS3 G |
N-Channel Power MOSFET
- ESD128-B1-W0201 |
Low capacitance diodes for ESD protection
- BSC12DN20NS3 G |
N-Channel Power MOSFET
- BSC900N20NS3 G |
N-Channel Power MOSFET
- ESD128-B1-W0201 |
Low capacitance diodes for ESD protection
- BSC12DN20NS3 G |
N-Channel Power MOSFET
