Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD70R360P7S

Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 LED strips and signage Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes
  • 500V-950V N-Channel Power MOSFET - IPD70R360P7S - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote Datasheet
Description
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 LED strips and signage Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD70R360P7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD70R360P7S
500V-950V N-Channel Power MOSFET IPD70R360P7S
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 LED strips and signage Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes 2EDS8165H | Gate driver ICs BSC016N06NS | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IDH06G65C5 | CoolSiC™ Schottky Diodes

Infineon’s answer for flyback topologies

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

Summary of Features

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
    • Low switching losses (E oss)
    • Highly efficient
    • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

Benefits

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

Potential Applications

  • Charger
  • Adapter
  • TV
  • Lighting
  • Audio
  • Aux power

Applications

  • DIN rail power supplies
  • Industrial robots system solutions for Industry 4.0
  • LED strips and signage
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 2EDS8165H |
    Gate driver ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 2EDL8124G |
    Gate driver ICs
  • IDH06G65C5 |
    CoolSiC™ Schottky Diodes
  • 2EDS8165H |
    Gate driver ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 2EDL8124G |
    Gate driver ICs
  • IDH06G65C5 |
    CoolSiC™ Schottky Diodes
  • 2EDS8165H |
    Gate driver ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 2EDL8124G |
    Gate driver ICs
  • IDH06G65C5 |
    CoolSiC™ Schottky Diodes
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
2045-IPD70R360P7S
MOSFET Transistor 2045-IPD70R360P7S
MOSFETs CONSUMER Product overview: IPD70R360P7S from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2045-IPD70R360P7S can be used for catalog matching and distributor lookup.

MOSFETs CONSUMER Product overview: IPD70R360P7S from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2045-IPD70R360P7S can be used for catalog matching and distributor lookup.

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPD70R360P7S
Triode/MOS Tube/Transistor >> MOSFETs IPD70R360P7S
700V 12.5A 59.4W 360mΩ@10V,3A 3.5V@150uA N Channel TO-252-2(DPAK) MOSFETs ROHS

700V 12.5A 59.4W 360mΩ@10V,3A 3.5V@150uA N Channel TO-252-2(DPAK) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD70R360P7S 2045-IPD70R360P7S IPD70R360P7S
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.3600 ohms 0.3600 ohms
QG 16.4 nC
TJ -40 to 150 C (-40 to 302 F)
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