Win Source Part Number: 1382312-IPD70P04P4L0
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS®-P2
Package: Tape & Reel
Standard Package: 2,500 pcs
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): +5V, -16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPD70
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
P-Channel 40V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313
P-Channel 40V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313
P-Channel 40V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313
MOSFET P-CH 40V 70A TO252-3 Product overview: IPD70P04P4L08ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 70A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 70A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD70P04P4L08ATM
Power Field-Effect Transistor, 70A I(D), 40V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineon MOSFET IPD70P04P4L08ATMA2
Infineon MOSFET IPD70P04P4L08ATMA2
Infineon MOSFET IPD70P04P4L08ATMA2
MOSFET P-CH 40V 70A TO252-3
MOSFET, AEC-Q101, P-CH, -40V, -70A, 75W ROHS COMPLIANT: YES
MOSFET P-CH 40V 70A TO252-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1382312-IPD70P04P4L08ATMA2 | 448-IPD70P04P4L08ATMA2CT-ND | 278-IPD70P04P4L08ATMA2 | IPD70P04P4L08ATMA2 | 2207412P | IPD70P04P4L08ATMA2 | 51AH5909 | IPD70P04P4L08ATMA2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | 40V 70A TO252 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -40V, -70A, 75W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 75000 milliwatts | 75 milliwatts | 75000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | PG-TO252-3 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | -55degC ~ 175degC (TJ) |
| Transistor Grade / Operating Range | Automotive |
