Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 IPD65R660CFDBTMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 116788-IPD65R660CFDB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 615pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 - 116788-IPD65R660CFDBTMA1 - Win Source Electronics
    Win Source Electronics
  • IPD65R660CFDBTMA1 - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - IPD65R660CFDBTMA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD65R660CFDBTMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon - 13AC9050 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 116788-IPD65R660CFDB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 615pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 - 116788-IPD65R660CFDBTMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1
116788-IPD65R660CFDBTMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 116788-IPD65R660CFDBTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 116788-IPD65R660CFDB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 200μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 615pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 116788-IPD65R660CFDBTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 200μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 615pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- IPD65R660CFDBTMA1 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IPD65R660CFDBTMA1
IPD65R660CFDBTMA1
IPD65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET

IPD65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
650V 6A TO252 MOSFET Transistor
278-IPD65R660CFDBTMA1
650V 6A TO252 MOSFET Transistor 278-IPD65R660CFDBTMA1
MOSFET N-CH 650V 6A TO252-3 Product overview: IPD65R660CFDBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R660CFDBTMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 6A TO252-3 Product overview: IPD65R660CFDBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R660CFDBTMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD65R660CFDBTMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD65R660CFDBTMA1TR-ND
Single FETs, MOSFETs IPD65R660CFDBTMA1TR-ND
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3

N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD65R660CFDBTMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD65R660CFDBTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD65R660CFDBTMA1
MOSFET N-CH 650V 6A TO252-3

MOSFET N-CH 650V 6A TO252-3

Supplier's Site
Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon - 13AC9050 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon
13AC9050
Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon 13AC9050
MOSFET, N-CH, 650V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.594ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 650V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.594ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 116788-IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 278-IPD65R660CFDBTMA1 IPD65R660CFDBTMA1TR-ND IPD65R660CFDBTMA1 13AC9050
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 650V 6A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts
PD 62500 milliwatts 62500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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