N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
IPD65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 116788-IPD65R660CFDB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 200μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 615pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 6A TO252-3 Product overview: IPD65R660CFDBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R660CFDBTMA
MOSFET, N-CH, 650V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.594ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 650V 6A TO252-3
| DigiKey | Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD65R660CFDBTMA1TR-ND | IPD65R660CFDBTMA1 | 116788-IPD65R660CFDBTMA1 | 278-IPD65R660CFDBTMA1 | 13AC9050 | IPD65R660CFDBTMA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFDBTMA1 | 650V 6A TO252 MOSFET Transistor | Mosfet, N-Ch, 650V, 6A, To-252-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak | SOT3; TO-252 (DPAK); PG-TO252-3 | Tape & Reel (TR) | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | ||
| V(BR)DSS | 650 volts |
