Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 650V, 150DEG C, 62.5W ROHS COMPLIANT: YES
MOSFET N-CH 650V 6A TO252-3
| Rochester Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD65R660CFDAATMA1 | 2448548P | 448-IPD65R660CFDAATMA1DKR-ND | 39AH8910 | IPD65R660CFDAATMA1 |
| Product Name | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 150Deg C, 62.5W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
