Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 650V, 150DEG C, 62.5W ROHS COMPLIANT: YES
MOSFET N-CH 650V 6A TO252-3
| RS Components, Ltd. | Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2448548P | IPD65R660CFDAATMA1 | 448-IPD65R660CFDAATMA1DKR-ND | 39AH8910 | IPD65R660CFDAATMA1 |
| Product Name | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 150Deg C, 62.5W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | TO-252 (DPAK); TO-252 | PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
