Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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IPD65R660 - 650V AND 700V COOLMO Product overview: IPD65R660CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 700V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R660CFD can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186180-IPD65R660CFD
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R660CFD | 285-IPD65R660CFD | 1186180-IPD65R660CFD | IPD65R660CFD |
| Product Name | 500V-950V N-Channel Power MOSFET | 650V 700V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFD | MOSFET |
| Polarity | N-Channel; N | |||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.6600 ohms | |||
| QG | 22 nC |