Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD65R660CFD

Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Designers who used this product also designed with 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1 2
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Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Designers who used this product also designed with 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1 2
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD65R660CFD - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD65R660CFD
500V-950V N-Channel Power MOSFET IPD65R660CFD
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Designers who used this product also designed with 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1 2

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.


Summary of Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

Benefits

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • HID lamp ballast
  • LED lighting
  • eMobility

Designers who used this product also designed with


  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs

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Supplier's Site Datasheet
Singapore
650V 700V MOSFET Transistor
285-IPD65R660CFD
650V 700V MOSFET Transistor 285-IPD65R660CFD
IPD65R660 - 650V AND 700V COOLMO Product overview: IPD65R660CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 700V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R660CFD can be used for catalog matching and distributor lookup.

IPD65R660 - 650V AND 700V COOLMO Product overview: IPD65R660CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 700V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD65R660CFD can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFD - 1186180-IPD65R660CFD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFD
1186180-IPD65R660CFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFD 1186180-IPD65R660CFD
Manufacturer: Infineon Technologies Win Source Part Number: 1186180-IPD65R660CFD Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186180-IPD65R660CFD
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2

MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2

Buy Now

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD65R660CFD 285-IPD65R660CFD 1186180-IPD65R660CFD IPD65R660CFD
Product Name 500V-950V N-Channel Power MOSFET 650V 700V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R660CFD MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.6600 ohms
QG 22 nC
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