Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Win Source Part Number: 1001313-IPD65R225C7A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD65R225C7ATMA1CT,S
Base Product Number: IPD65R225
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 11A TO252-3 Product overview: IPD65R225C7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R225C7ATMA1
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 650V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 650V 11A TO252-3
MOSFET N-CH 650V 11A TO252-3
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R225C7ATMA1 | 1001313-IPD65R225C7ATMA1 | 278-IPD65R225C7ATMA1 | 2440943 | IPD65R225C7ATMA1TR-ND | 54X5227 | IPD65R225C7ATMA1 | IPD65R225C7ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 11A TO252 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 11A, To-252; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| rDS(on) | 0.2250 ohms | |||||||
| Package Type | PG-TO252-3 | SOT3 | Tape & Reel (TR) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| PD | 63000 milliwatts | 63000 milliwatts | 63000 milliwatts |
