MOSFET N-CH 650V 11A TO252-3 Product overview: IPD65R225C7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD65R225C7ATMA1
Win Source Part Number: 1001313-IPD65R225C7A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD65R225C7ATMA1CT,S
Base Product Number: IPD65R225
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 650V 11A TO252-3
MOSFET N-CH 650V 11A TO252-3
MOSFET, N-CH, 650V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD65R225C7ATMA1 | 1001313-IPD65R225C7ATMA1 | IPD65R225C7ATMA1 | IPD65R225C7ATMA1TR-ND | 2440943 | IPD65R225C7ATMA1 | IPD65R225C7ATMA1 | 54X5227 |
| Product Name | 650V 11A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 11A, To-252; Channel Type Infineon | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 700 volts | 650 volts | ||||||
| PD | 63000 milliwatts | 63000 milliwatts | 63000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | Tape & Reel (TR) | SOT3 | PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
