The IPD65R1K4CFD is a 650V N-channel Power MOSFET with an integrated fast body diode, designed for high-voltage switching applications requiring low switching losses and reduced EMI. It is housed in an SMD package with dimensions of 6.35mm to 6.73mm width (E), 5.97mm to 6.22mm length (D), and 9.40mm to 10.48mm height (H), and features 3 terminals. The device is fully qualified according to JEDEC for industrial applications and is available in a halogen-free mold compound. It meets the AEC-Q200 standard for automotive reliability and is compliant with RoHS and UL 94 V-0 for flammability.
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
Benefits
Potential Applications
Manufacturer: Infineon Technologies
Win Source Part Number: 1186172-IPD65R1K4CFD
Manufacturer Homepage: www.infineon.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R1K4CFD | 1186172-IPD65R1K4CFD | IPD65R1K4CFD |
| Product Name | 500V-950V N-Channel Power MOSFET | Electronic Surplus - IPD65R1K4CFD | MOSFET |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 1.4 ohms | ||
| QG | 10 nC |
