Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD65R190C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET
  • 500V-950V N-Channel Power MOSFET - IPD65R190C7 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7 - 1186171-IPD65R190C7 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD65R190C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD65R190C7
500V-950V N-Channel Power MOSFET IPD65R190C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET ISC060N10NM6 | N-Channel Power MOSFET

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • ISC060N10NM6 |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • ISC060N10NM6 |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • ISC060N10NM6 |
    N-Channel Power MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7 - 1186171-IPD65R190C7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7
1186171-IPD65R190C7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7 1186171-IPD65R190C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186171-IPD65R190C7 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186171-IPD65R190C7
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
2088-IPD65R190C7
MOSFET Transistor 2088-IPD65R190C7
MOSFETs HIGH POWER_NEW Product overview: IPD65R190C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD65R190C7 can be used for catalog matching and distributor lookup.

MOSFETs HIGH POWER_NEW Product overview: IPD65R190C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD65R190C7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPD65R190C7
MOSFET IPD65R190C7
MOSFET HIGH POWER_NEW

MOSFET HIGH POWER_NEW

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD65R190C7 1186171-IPD65R190C7 2088-IPD65R190C7 IPD65R190C7
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7 MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.1900 ohms
QG 23 nC
TJ -55 to 150 C (-67 to 302 F)
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