The IPD65R190C7 is a 650V CoolMOS™ C7 N-channel power MOSFET in a PG-TO252-3 (DPAK) package, designed for high-efficiency switching applications such as PFC and PWM stages in computing, server, telecom, UPS, and solar systems. It has a maximum on-state resistance of 190 mΩ at 25°C, a pulsed drain current of 49 A, and a total gate charge of 23 nC. The device features enhanced dv/dt ruggedness up to 100 V/ns and an avalanche energy rating of 57 mJ for single pulses. Its thermal resistance from junction to case is 1.73 °C/W, and it operates reliably up to a junction temperature of 150°C. The MOSFET is fully qualified according to JEDEC for industrial applications and meets RoHS standards with halogen-free molding compound.
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186171-IPD65R190C7
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFETs HIGH POWER_NEW Product overview: IPD65R190C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD65R190C7 can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD65R190C7 | 1186171-IPD65R190C7 | 2088-IPD65R190C7 | IPD65R190C7 |
| Product Name | 500V-950V N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD65R190C7 | MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.1900 ohms | |||
| QG | 23 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) |
