Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPD60R800CEAUMA1

Description
Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPD60R800CEAUMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065250-IPD60R800CEAUMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065250-IPD60R800CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065250-IPD60R800CEAUMA1
Win Source Part Number: 1065250-IPD60R800CEA UMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Power Dissipation (Max): 74W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3-344 Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSS127H6327XTSA2; IPN60R2K1CEATMA1; FQD1N60CTM; IPD60R1K0CEAUMA1; STN1NK60Z; BSS127S-7IPD60R800CE ; SP001396890; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 448-IPD60R800CEAUMA1 CT,2156-IPD60R800CEA UMA1,ROCINFIPD60R800 CEAUMA1,IPD60R800CEA UMA1-ND,SP001396890, 448-IPD60R800CEAUMA1 DKR,448-IPD60R800CEA UMA1TR Base Product Number: IPD60R800 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1065250-IPD60R800CEAUMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 74W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSS127H6327XTSA2; IPN60R2K1CEATMA1; FQD1N60CTM; IPD60R1K0CEAUMA1; STN1NK60Z; BSS127S-7IPD60R800CE; SP001396890;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD60R800CEAUMA1CT,2156-IPD60R800CEAUMA1,ROCINFIPD60R800CEAUMA1,IPD60R800CEAUMA1-ND,SP001396890,448-IPD60R800CEAUMA1DKR,448-IPD60R800CEAUMA1TR
Base Product Number: IPD60R800
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD60R800CEAUMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD60R800CEAUMA1DKR-ND
Single FETs, MOSFETs 448-IPD60R800CEAUMA1DKR-ND
N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD60R800CEAUMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD60R800CEAUMA1CT-ND
Single FETs, MOSFETs 448-IPD60R800CEAUMA1CT-ND
N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD60R800CEAUMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD60R800CEAUMA1TR-ND
Single FETs, MOSFETs 448-IPD60R800CEAUMA1TR-ND
N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

Buy Now Datasheet
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity Infineon - 34AC1684 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity Infineon
34AC1684
Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity Infineon 34AC1684
MOSFET, N-CH, 600V, 8.4A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 8.4A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD60R800CEAUMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD60R800CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD60R800CEAUMA1
CONSUMER

CONSUMER

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPD60R800CEAUMA1 1065250-IPD60R800CEAUMA1 448-IPD60R800CEAUMA1DKR-ND IPD60R800CEAUMA1 34AC1684 IPD60R800CEAUMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 8.4A, To-252; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
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