Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPD60R800CEAUMA1

Win Source Part Number: 1065250-IPD60R800CEAUMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 74W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSS127H6327XTSA2; IPN60R2K1CEATMA1; FQD1N60CTM; IPD60R1K0CEAUMA1; STN1NK60Z; BSS127S-7IPD60R800CE; SP001396890;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD60R800CEAUMA1CT,2156-IPD60R800CEAUMA1,ROCINFIPD60R800CEAUMA1,IPD60R800CEAUMA1-ND,SP001396890,448-IPD60R800CEAUMA1DKR,448-IPD60R800CEAUMA1TR
Base Product Number: IPD60R800
Drive Voltage (Max Rds On, Min Rds On): 10V

Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344

N-Channel 600V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344