N-Channel 600V 9.9A (Tc) 82W (Tc) Surface Mount PG-TO252-3-344
CONSUMER Product overview: IPD60R650CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R650CEAUMA1
Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Win Source Part Number: 1011538-IPD60R650CEA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 82W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001396884,2156-IPD
Base Product Number: IPD60R650
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 600V, 9.9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
CONSUMER
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IPD60R650CEAUMA1TR-ND | 278-IPD60R650CEAUMA1 | IPD60R650CEAUMA1 | 1011538-IPD60R650CEAUMA1 | 2605141 | IPD60R650CEAUMA1 | 34AC1683 | IPD60R650CEAUMA1 | IPD60R650CEAUMA1 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 9.9A, To-252; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | PG-TO252-3 | SOT3 | TO-252 (DPAK); TO-252 | TO-3 | PG-TO252-3-344 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 82 milliwatts | 82000 milliwatts |
