Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R600PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Adapters and chargers Home appliances Refrigerators and freezers Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPD60R600PFD7S - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPD60R600PFD7S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Adapters and chargers Home appliances Refrigerators and freezers Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD60R600PFD7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R600PFD7S
500V-950V N-Channel Power MOSFET IPD60R600PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Adapters and chargers Home appliances Refrigerators and freezers Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • Charger
  • Adapter
  • Fridge
  • Fans
  • Pumps

Applications

  • Adapters and chargers
  • Home appliances
  • Refrigerators and freezers

Designers who used this product also designed with


  • IRS4427S |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs

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Supplier's Site Datasheet
Transistors - IPD60R600PFD7S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD60R600PFD7S
Transistors IPD60R600PFD7S
TO-252-3 MOSFETs ROHS

TO-252-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPD60R600PFD7S IPD60R600PFD7S
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.6000 ohms
QG 8.5 nC
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