The IPD60R600PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a DPAK (PG-TO-252-3) package, designed for cost-sensitive consumer applications such as chargers, adapters, lighting, and motor drives. It features a maximum on-state resistance of 600 mΩ, a pulsed drain current of 14 A, and a gate charge of 8.5 nC. The device includes an integrated fast body diode with a peak reverse recovery current of 3.8 A and a reverse recovery time of up to 71 ns. It operates with a maximum junction temperature of 150°C and has a thermal resistance of 4.0 °C/W from junction to case. The MOSFET complies with JEDEC standards and exhibits high ESD ruggedness with a Human Body Model rating of 2 kV. The package dimensions are defined with a body width of 6.40 to 6.73 mm and lead spacing of 2.29 mm (BSC).
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer.
This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
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| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPD60R600PFD7S | IPD60R600PFD7S |
| Product Name | 500V-950V N-Channel Power MOSFET | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.6000 ohms | |
| QG | 8.5 nC |
