Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R600P6

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

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Manufacturer: Infineon Technologies
Win Source Part Number: 040635-IPD60R600P6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Family Name: IPD60R600P6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 200μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 557pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): STD9HN65M2; SiHD7N60ET4-GE3; SiHD7N60ET5-GE3 ; SiHD7N60ETL-GE3;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

MOSFET N-CH 600V 7.3A TO252-3

MOSFET N-CH 600V 7.3A TO252-3 Product overview: IPD60R600P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600P6 can be used for catalog matching and distributor lookup.