MOSFET N-CH 600V 14.7A TO252 Product overview: IPD60R400CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 14.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R400CEAUMA1
N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252-2
N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252-2
N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252-2
Win Source Part Number: 1161294-IPD60R400CEA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 112W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-2
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPD60R400CE; SP001396880;
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD60R400CEAUMA1-ND,
Base Product Number: IPD60R400
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 14.7A TO252
MOSFET N-CH 600V 14.7A TO252
MOSFET, N-CH, 600V, 14.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:14.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD60R400CEAUMA1 | 2172525 | 2172526P | IPD60R400CEAUMA1DKR-ND | 1161294-IPD60R400CEAUMA1 | IPD60R400CEAUMA1 | IPD60R400CEAUMA1 | IPD60R400CEAUMA1 | 34AC1681 |
| Product Name | 600V 14.7A TO252 MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 14.7A, To-252; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 112 milliwatts | 112000 milliwatts | 112000 milliwatts | ||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
