MOSFET N-CH 600V 10A TO252-3 Product overview: IPD60R360PFD7SAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R360PFD7SAU
Power Field-Effect Transistor
N-Channel 650V 10A (Tc) 43W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650V 10A (Tc) 43W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650V 10A (Tc) 43W (Tc) Surface Mount PG-TO252-3-344
INFINEON MOSFET IPD60R360PFD7SAUMA1
INFINEON MOSFET IPD60R360PFD7SAUMA1
INFINEON MOSFET IPD60R360PFD7SAUMA1
Win Source Part Number: 980928-IPD60R360PFD7
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™PFD7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Power Dissipation (Max): 43W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPD60R360PFD7SAU
Base Product Number: IPD60R
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 600V, 10A, TO-252 ROHS COMPLIANT: YES
MOSFET N-CH 600V 10A TO252-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD60R360PFD7SAUMA1 | IPD60R360PFD7SAUMA1 | 448-IPD60R360PFD7SAUMA1CT-ND | 2583858 | 980928-IPD60R360PFD7SAUMA1 | 78AH7257 | IPD60R360PFD7SAUMA1 |
| Product Name | 600V 10A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 600V, 10A, To-252 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | ||||||
| PD | 43 milliwatts | 43000 milliwatts |
