Infineon MOSFET IPD60R360P7SAUMA1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R Product overview: IPD60R360P7SAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R360P7SAUMA
Win Source Part Number: 1130027-IPD60R360P7S
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 41W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPD60R360P7S;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: ROCINFIPD60R360P7SAU
Base Product Number: IPD60R
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 600V 9A TO252-3
MOSFET N-CH 600V 9A TO252-3
MOSFET, N-CH, 600V, 9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2172524P | 2172522 | 278-IPD60R360P7SAUMA1 | 1130027-IPD60R360P7SAUMA1 | IPD60R360P7SAUMA1DKR-ND | IPD60R360P7SAUMA1 | IPD60R360P7SAUMA1 | IPD60R360P7SAUMA1 | 57AC6813 |
| Product Name | MOSFETs | MOSFETs | 600V 9A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 9A, To-252; Transistor Polarity Infineon |
| Package Type | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | Tape and Reel | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | TO-3; TO-252 (DPAK) | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 41 milliwatts | 41000 milliwatts | 41000 milliwatts |
