N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3
Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineon MOSFET IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
MOSFET, N-CH, 600V, 12A, 53W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| DigiKey | Rochester Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD60R280P7SAUMA1CT-ND | IPD60R280P7SAUMA1 | 2183051 | IPD60R280P7SAUMA1 | 93AC7116 | IPD60R280P7SAUMA1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 12A, 53W, To-252; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel |
